Semiconductor device and method for producing the same

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S345000

Reexamination Certificate

active

07906819

ABSTRACT:
The semiconductor device includes the concentration of the impurity of the first conductivity type in a doped channel layer of a first conductivity type in the pass transistor is set at a relatively low value, and pocket regions of the first conductivity type in a pass transistor are formed so as to be relatively shallow with a relatively high impurity concentration.

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