Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-03-15
2011-03-15
Prenty, Mark (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S345000
Reexamination Certificate
active
07906819
ABSTRACT:
The semiconductor device includes the concentration of the impurity of the first conductivity type in a doped channel layer of a first conductivity type in the pass transistor is set at a relatively low value, and pocket regions of the first conductivity type in a pass transistor are formed so as to be relatively shallow with a relatively high impurity concentration.
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Kojima Hideyuki
Usujima Akihiro
Fujitsu Patent Center
Fujitsu Semiconductor Limited
Prenty Mark
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