Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-07-26
2011-07-26
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S624000, C438S637000, C438S700000, C438S761000, C438S778000
Reexamination Certificate
active
07985677
ABSTRACT:
One of methods of manufacturing a semiconductor device of the present invention is as follows: a first conductive layer is formed, a first insulating layer is formed over the first conductive layer, and a second insulating layer is formed over the first insulating layer; then, a first opening portion is formed in the first insulating layer and the second insulating layer to reach the first conductive layer; a mask layer having low wettability to a composition containing a conductive material is formed over the second insulating layer, and a second opening portion larger than the first opening portion is formed in the second insulating layer; subsequently, the first and second opening portions are filled with the composition containing a conductive material to form a second conductive layer.
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Nikkei Microdevices, No. 233, pp. 58-65, Nov. 2004.
Fujii Gen
Yamazaki Shunpei
Costellia Jeffrey L.
Garcia Joannie A
Nixon & Peabody LLP
Richards N Drew
Semiconductor Energy Laboratory Co,. Ltd.
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