Transistors having asymmetric strained source/drain portions

Details Transistors having asymmetric strained source/drain portions Transistors having asymmetric strained source/drain portions

2011-07-19

2011-07-19

Menz, Laura M (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S347000, C257S315000

Reexamination Certificate

active

07982269

ABSTRACT:
A semiconductor structure. The structure includes (a) a fin region having (i) a first source/drain portion having a first surface and a third surface, wherein the first and third surfaces are (A) parallel to each other and (B) not coplanar, (ii) a second source/drain portion having a second surface and a fourth surface, wherein the second and fourth surfaces are (A) parallel to each other and (B) not coplanar, and (iii) a channel region; (b) a gate dielectric layer; (c) a gate electrode region, wherein the gate dielectric layer (i) is sandwiched between, and (ii) electrically insulates the gate electrode region and the channel region; and (d) first second strain creating regions on the third and fourth surfaces, respectively, wherein the first and second strain creating regions comprise a strain creating material.

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