MEMS sensor comprising a deformation-free back electrode

Details MEMS sensor comprising a deformation-free back electrode MEMS sensor comprising a deformation-free back electrode

2011-04-12

2011-04-12

Tran, Minh-Loan T (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Physical deformation

C257S414000, C257S416000, C257S417000, C257S418000, C257S419000, C257S420000, C257SE29324, C257S252000, C257S254000, C438S050000

Reexamination Certificate

active

07923792

ABSTRACT:
An MEMS sensor constructed on a base chip and having a capacitive mode of operation is disclosed. The MEMS sensor has a patterned layer construction applied on the base chip. A cutout is produced in the layer construction, the moveable electrode, for example a membrane, being arranged in said cutout. The cutout is spanned by a covering layer, which bears on the layer construction around the cutout and comprises the back electrode.

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