Method for measuring rotation angle of bonded wafer

Details Method for measuring rotation angle of bonded wafer Method for measuring rotation angle of bonded wafer

2011-01-04

2011-01-04

Guadalupe-McCall, Yaritza (Department: 2841)

Geometrical instruments

Miscellaneous

Light direction

C033S706000

Reexamination Certificate

active

07861421

ABSTRACT:
The present invention provides a method for measuring a rotation angle of a bonded wafer, wherein a base wafer and a bond wafer each having a notch indicative of a crystal orientation formed at an outer edge thereof are bonded to each other at a desired rotation angle by utilizing the notches, a profile of the bond wafer having a reduced film thickness is observed with respect to a bonded wafer manufactured by reducing a film thickness of the bond wafer, a positional direction of the notch of the bond wafer seen from a center of the bonded wafer is calculated by utilizing the profile, an angle formed between the calculated positional direction of the notch of the bond wafer and a positional direction of the notch of the base wafer is calculated, and a rotation angle of the base wafer and the bond wafer is measured. As a result, the method for measuring a rotation angle of a bonded wafer that enables accurately and easily measuring the rotation angle of the notches of the base wafer and the bond wafer in a bonded wafer manufacturing line can be provided.

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International Search Report for International Application No. PCT/JP2008/001752, issued Oct. 7, 2008.

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