Thin film transistors with poly(arylene ether) polymers as...

Details Thin film transistors with poly(arylene ether) polymers as... Thin film transistors with poly(arylene ether) polymers as...

2011-04-05

2011-04-05

Dang, Trung (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE51007, C257SE29273

Reexamination Certificate

active

07919825

ABSTRACT:
The use of a poly(arylene ether) polymer as a passivation or gate dielectric layer in thin film transistors. This poly(arylene ether) polymer includes polymer repeat units of the following structure:in-line-formulae description="In-line Formulae" end="lead"?—(O—Ar1—O—Ar2—O—)m—(—O—Ar3—O—Ar4—O)n—in-line-formulae description="In-line Formulae" end="tail"?where Ar1, Ar2, Ar3, and Ar4are identical or different aryl radicals, m is 0 to 1, n is 1−m, and at least one of the aryl radicals is grafted to the backbone of the polymer.

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