Manufacturing method of semiconductor device

Details Manufacturing method of semiconductor device Manufacturing method of semiconductor device

2011-01-04

2011-01-04

Toledo, Fernando L (Department: 2895)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S664000, C438S651000, C257S757000, C257SE21164, C257SE29116

Reexamination Certificate

active

07863191

ABSTRACT:
A first structure is formed, having a contact plug formed on the bottom of a first opening in an interlayer insulating film, a second opening formed through the interlayer insulating film to reach a semiconductor substrate, and a third opening formed through the interlayer insulating film to reach a polymetal gate electrode. A cobalt layer is deposited on the surface of the structure, and thermally treated to form a cobalt silicide layer on the surface of the contact plug and on the bottom face of the second opening. The structure is then treated to remove the cobalt, in the state in which the cobalt silicide layer is formed, with the use of a chemical solution capable of dissolving cobalt but not the polymetal.

REFERENCES:
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Japanese Patent Office issued a Japanese Office Action dated Apr. 30, 2009, Application No. 2006-264221.

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