Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing
Reexamination Certificate
2011-06-07
2011-06-07
Kunemund, Robert M (Department: 1714)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With a step of measuring, testing, or sensing
C117S090000, C117S094000, C117S104000, C117S105000, C117S103000
Reexamination Certificate
active
07955435
ABSTRACT:
A method for minimizing particle generation during deposition of a graded Si.sub.1-xGe.sub.x layer on a semiconductor material includes providing a substrate in an atmosphere including a Si precursor and a Ge precursor, wherein the Ge precursor has a decomposition temperature greater than germane, and depositing the graded Si.sub.1-xGe.sub.x layer having a final Ge content of greater than about 0.15 and a particle density of less than about 0.3 particles/cm.sup.2 on the substrate.
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Currie Matthew T.
Fitzgerald Eugene
Langdo Thomas A.
Vineis Christopher J.
Westhoff Richard
Kunemund Robert M
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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