Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2011-07-26
2011-07-26
Wilson, Allan R (Department: 2815)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C257SE21415, C438S154000
Reexamination Certificate
active
07985634
ABSTRACT:
A semiconductor device includes a Si substrate, an insulating film formed on one part of the Si substrate, a bulk Si region grown on other part of the Si substrate other than the insulating film, Si1-xGex(0<x≦1) thin film formed on the insulating film in direct contact with the insulating film, and substantially flush with top of the bulk Si region, a first field effect transistor fabricated in the bulk Si region, and a second field effect transistor fabricated in the Si1-xGexthin film.
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Kabushiki Kaisha Toshiba
Wilson Allan R
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