Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

2011-01-04

2011-01-04

Hoang, Quoc D (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27091, C257S029000

Reexamination Certificate

active

07863664

ABSTRACT:
It is disclosed a semiconductor device including a silicon substrate, provided with a plurality of cell active regions in a call region, an element isolation groove, formed in a portion, between any two of the plurality of cell active region, of the silicon substrate, a capacitor dielectric film, formed in the element isolation groove, a capacitor upper electrode, formed on the capacitor dielectric film, and configuring a capacitor together with the silicon substrate and the capacitor dielectric film. The semiconductor device is characterized in that a dummy active region is provided next to the cell region in the silicon substrate.

REFERENCES:
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patent: 5304835 (1994-04-01), Imai et al.
patent: 5468983 (1995-11-01), Hirase et al.
patent: 5641699 (1997-06-01), Hirase et al.
patent: 7030457 (2006-04-01), Ahrens et al.
patent: 1096135 (1994-12-01), None
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patent: 2353328 (2001-01-01), None
patent: 92/02044 (1992-02-01), None
Chinese Office Action dated Oct. 23, 2009, issued in corresponding Chinese Patent Application No. 200810086170.0.

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