Silicon-on-insulator substrate with built-in substrate junction

Details Silicon-on-insulator substrate with built-in substrate junction Silicon-on-insulator substrate with built-in substrate junction

2011-06-07

2011-06-07

Garber, Charles (Department: 2812)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Self-aligned

C438S142000, C438S149000, C438S151000, C438S311000, C438S371000, C438S372000, C438S455000, C438S459000, C257S296000, C257S347000, C257SE21704, C257SE27112, C257SE29285

Reexamination Certificate

active

07955940

ABSTRACT:
A method of forming a SOI substrate, diodes in the SOI substrate and electronic devices in the SOI substrate and an electronic device formed using the SOI substrate. The method of forming the SOI substrate includes forming an oxide layer on a silicon first substrate; ion-implanting hydrogen through the oxide layer into the first substrate, to form a fracture zone in the substrate; forming a doped dielectric bonding layer on a silicon second substrate; bonding a top surface of the bonding layer to a top surface of the oxide layer; thinning the first substrate by thermal cleaving of the first substrate along the fracture zone to form a silicon layer on the oxide layer to formed a bonded substrate; and heating the bonded substrate to drive dopant from the bonding layer into the second substrate to form a doped layer in the second substrate adjacent to the bonding layer.

REFERENCES:
patent: 2007/0264795 (2007-11-01), Miller et al.

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