Ferroelectric memory and its manufacturing method

Details Ferroelectric memory and its manufacturing method Ferroelectric memory and its manufacturing method

2011-07-12

2011-07-12

Smith, Zandra (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S306000

Reexamination Certificate

active

07977720

ABSTRACT:
To securely prevent hydrogen from entering a ferroelectric layer of a ferroelectric memory. A first hydrogen barrier layer5is formed on the lower side of ferroelectric capacitors7. Upper surfaces and side surfaces of the ferroelectric capacitors7are covered by a second hydrogen barrier layer. All upper electrodes7cof the plural ferroelectric capacitors7to be connected to a common plate line P are connected to one another by an upper wiring layer91. The upper wiring layer91is connected to the plate line P through a lower wiring32provided below the ferroelectric capacitors7. A third hydrogen barrier layer92is formed on the upper wiring layer91such that all edge sections92aof the third hydrogen barrier layer92come in contact with the first hydrogen barrier layer5.

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