Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Havin growth from molten state
Reexamination Certificate
2011-03-15
2011-03-15
Kunemund, Robert M (Department: 1714)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Havin growth from molten state
C117S078000, C117S079000, C117S083000
Reexamination Certificate
active
07905958
ABSTRACT:
A method of manufacturing group III-nitride semiconductor crystal includes the steps of accommodating an alloy containing at least a group III-metal element and an alkali metal element in a reactor, introducing a nitrogen-containing substance in the reactor, dissolving the nitrogen-containing substance in an alloy melt in which the alloy has been melted, and growing group III-nitride semiconductor crystal is provided. The group III-nitride semiconductor crystal attaining a small absorption coefficient and an efficient method of manufacturing the same, as well as a group III-nitride semiconductor device attaining high light emission intensity can thus be provided.
REFERENCES:
patent: 6398867 (2002-06-01), D'Evelyn et al.
patent: 6413627 (2002-07-01), Motoki et al.
patent: 6562124 (2003-05-01), Ivantzov et al.
patent: 6592663 (2003-07-01), Sarayama et al.
patent: 2002/0175338 (2002-11-01), Sarayama et al.
patent: 2004/0124434 (2004-07-01), D'Evelyn et al.
patent: 2004/0183090 (2004-09-01), Kitaoka et al.
patent: 1288079 (2001-03-01), None
patent: 1748290 (2006-03-01), None
patent: 1 439 572 (2004-07-01), None
patent: 1 634 980 (2006-03-01), None
patent: 2 326 160 (1998-12-01), None
patent: 2000-12900 (2000-01-01), None
patent: 2001-102316 (2001-04-01), None
patent: 2004-224600 (2004-08-01), None
patent: 2005-119893 (2005-05-01), None
Balkas, C.M. et al., “Growth and characterization of GaN single crystals,” Journal of Crystal Growth, vol. 208, No. 1-4, Jan. 1, 2000, pp. 100-106.
European Search Report issued in European Patent Application No. EP 05727904.4-1215 dated Jan. 27, 2009.
Chinese Office Action, with English Translation, with Chinese Patent Application No. CN 200580016039.1, dated Jun. 20, 2008.
“GaN Single Crystal Growth by th Flux Method,” Hisanori Yamane, et. al., Oyo Buturi, The Japan Society of Applied Physics, May 2002, vol. 71, No. 5, pp. 548-552.
Hirota Ryu
Kawamura Fumio
Mori Yusuke
Nakahata Seiji
Sasaki Takatomo
Kunemund Robert M
McDermott Will & Emery LLP
Mori Yusuke
Sumitomo Electric Industries Ltd.
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