Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-06-14
2011-06-14
Roman, Angel (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S625000, C438S645000, C438S677000, C257SE21577, C257SE21584, C257SE21585, C977S742000, C977S842000
Reexamination Certificate
active
07960277
ABSTRACT:
An electronic device includes a conductive pattern formed on a first insulating film, a second insulating film formed on the conductive pattern and the first insulating film, a hole formed in the second insulating film on the conductive pattern, carbon nanotubes formed in the hole to extend from a surface of the conductive pattern, and a buried film buried in clearances among the carbon nanotubes in the hole.
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Fujitsu Semiconductor Limited
Roman Angel
Westerman Hattori Daniels & Adrian LLP
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