Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-01-04
2011-01-04
Sefer, A. (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S202000, C257S203000, C257S207000, C257S357000, C257S358000, C257SE27110, C257SE29255, C257SE29242
Reexamination Certificate
active
07863687
ABSTRACT:
A semiconductor apparatus includes an internal circuit, a CMOS composed of a P-channel MOS transistor with a source connected to a high-potential power supply line and a gate connected to the internal circuit, and an N-channel MOS transistor with a source connected to a low-potential power supply line and a gate connected to the internal circuit, an output terminal connected to a drain of the P-channel MOS transistor and a drain of the N-channel MOS transistor and a protection transistor with a source and a gate connected to one power supply line of the high-potential power supply line and the low-potential power supply line and a drain connected to the output terminal, a conductivity type of the protection transistor being the same as a conductivity type of one MOS transistor of the P-channel MOS transistor and the N-channel MOS transistor, the source of the one MOS transistor being connected to the one power supply line. Resistance of a current path extending from the output terminal through the one MOS transistor to the one power supply line has a value such that, when a voltage at which the protection transistor causes snapback is applied between the output terminal and the one power supply line, a current flowing through the current path is lower than a breakdown current of the one MOS transistor.
REFERENCES:
patent: 6169311 (2001-01-01), Iwasaki
patent: 6222213 (2001-04-01), Fujiwara
patent: 6943412 (2005-09-01), Horiguchi
patent: 2004/0195625 (2004-10-01), Ichikawa
patent: 2009/0091870 (2009-04-01), Huang et al.
patent: 05-003173 (1993-01-01), None
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patent: 2006-332144 (2006-12-01), None
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Japanese Office Action corresponding to U.S. Appl. No. 12/127,907 mailed on Jun. 29, 2009.
Kabushiki Kaisha Toshiba
Sefer A.
Turocy & Watson LLP
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