Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2011-03-29

2011-03-29

Richards, N Drew (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S255000, C257S297000, C257S347000, C257S350000, C257S351000, C257SE21415, C257SE21568

Reexamination Certificate

active

07915684

ABSTRACT:
To provide a structure and a manufacturing method for efficiently forming a transistor to which tensile strain is preferably applied and a transistor to which compressive strain is preferably applied over the same substrate when stress is applied to a semiconductor layer in order to improve mobility of the transistors in a semiconductor device. Plural kinds of transistors which are separated from a single-crystal semiconductor substrate and include single-crystal semiconductor layers bonded to a substrate having an insulating surface with a bonding layer interposed therebetween are provided over the same substrate. One of the transistors uses a single-crystal semiconductor layer as an active layer, to which tensile strain is applied. The other transistors use single-crystal semiconductor layers as active layers, to which compressive strain using part of heat shrink generated by heat treatment of the base substrate after bonding is applied.

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