Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2011-08-30

2011-08-30

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S762000, C438S763000, C257SE21626, C257SE21640

Reexamination Certificate

active

08008204

ABSTRACT:
A method of manufacturing the semiconductor device is provided, which provides a prevention for a “dug” of a silicon substrate caused by the etching in regions except a region for forming a film during a removal of the film with a chemical solution. A method of manufacturing a semiconductor device according to an embodiment of the present invention includes forming a first silicon oxide film on a surface of a silicon substrate or on a surface of a gate electrode when a silicon nitride film for a dummy side wall is etched off, to provide a protection for such surfaces, and then etching a portion of the silicon nitride film with a chemical solution, and then a second oxide film for supplementing a simultaneously-etched portion of the first silicon oxide film is formed, and eventually performing an etching for completely removing the silicon nitride film for the dummy side wall.

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