Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Fluid growth from gaseous state combined with preceding...
Reexamination Certificate
2011-05-24
2011-05-24
Ghyka, Alexander G (Department: 2812)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Fluid growth from gaseous state combined with preceding...
C257SE21101, C257SE21521, C977S762000
Reexamination Certificate
active
07947580
ABSTRACT:
A method for the fabrication of a semiconductor structure that includes areas that have different crystalline orientation and semiconductor structure formed thereby. The disclosed method allows fabrication of a semiconductor structure that has areas of different semiconducting materials. The method employs templated crystal growth using a Vapor-Liquid-Solid (VLS) growth process. A silicon semiconductor substrate having a first crystal orientation direction is etched to have an array of holes into its surface. A separation layer is formed on the inner surface of the hole for appropriate applications. A growth catalyst is placed at the bottom of the hole and a VLS crystal growth process is initiated to form a nanowire. The resultant nanowire crystal has a second different crystal orientation which is templated by the geometry of the hole.
REFERENCES:
patent: 7432522 (2008-10-01), Samuelson et al.
patent: 2007/0257246 (2007-11-01), Bakkers et al.
Fulin Xiong, et al., “Liquid-metal-mediated homoepitaxial . . . ”, Appl. Phys. Lett. 59, (27), Dec. 1991.
Yue Wu, et al., “Controlled Growth and Structures of Molecular-Scale .. . ”, Nano Letters, 2004, vol. 4, No. 3, pp. 433-436.
Volker Schmidt, et al., “Diameter-Dependent Growth Direction . . . ”, Nano Letters, 2005, vol. 5, No. 5, pp. 931-935.
Kok-Keong Lew, et al., “Template-directed vapor-liquid-solid growth of silicon nanowires”, J. Vax. Sci. Technol. B 20 (1), Jan./Feb. 2002, pp. 389-392.
Hemanth Jagannatha.N, et al., “Templated germanium nanowire synthesis using oriented . . . ” J. Vac. Sci. Technol. B 24(5), Sep./Oct. 2006, pp. 2220-2224.
Hong Jin Fan, et al., “Semiconductor Nanowires: From Self-Organization to Patterned Growth”, www.small-journal.com, 2006, pp. 700-717.
Bjoerk Mikael T.
Hayden Oliver
Riel Heike E.
Riess Walter Heinrich
Schmid Heinz
Ghyka Alexander G
International Business Machines - Corporation
Nikmanesh Seahvosh J
Zarick Gail H.
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