Device and manufacturing method

Details Device and manufacturing method Device and manufacturing method

2011-08-23

2011-08-23

Lee, Cheung (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S106000, C438S110000, C438S127000, C257SE21499, C257SE21502, C257SE21508

Reexamination Certificate

active

08003515

ABSTRACT:
A description is given of a device, including a semiconductor chip, a first metal layer laterally extending over the semiconductor chip, the first metal layer having a first thickness. A dielectric layer laterally extends over the first metal layer, and a second metal layer laterally extends over the dielectric layer, the second metal layer having a second thickness that is at least four times larger than the first thickness.

REFERENCES:
patent: 2007/0114662 (2007-05-01), Helneder et al.
patent: 2008/0038874 (2008-02-01), Lin
patent: 2008/0169539 (2008-07-01), Fang et al.
patent: 2009/0170241 (2009-07-01), Shim et al.

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