Semiconductor device

Details Semiconductor device Semiconductor device

2011-07-19

2011-07-19

Parker, Ken A (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29257, C257SE29258

Reexamination Certificate

active

07982264

ABSTRACT:
The semiconductor device according to the present invention includes a semiconductor substrate, an insulating layer laminated on the semiconductor substrate, a semiconductor layer laminated on the insulating layer, an annular deep trench having a depth reaching the insulating layer from the surface of the semiconductor layer, a source region formed on the surface layer of the semiconductor layer in a transistor forming region enclosed with the deep trench, a drain region formed on the surface layer of the semiconductor layer in the transistor forming region, an isolation region formed between the source region and the drain region for electrically isolating the source region and the drain region from each other, and a current path formed on the transistor forming region for guiding a current from the drain region to a position opposite to the source region in the vertical direction perpendicular to the surface of the semiconductor device.

REFERENCES:
patent: 6177704 (2001-01-01), Suzuki et al.
patent: 2003/0020134 (2003-01-01), Werner et al.
patent: 2004/0171220 (2004-09-01), Yang et al.
patent: 2005/0012114 (2005-01-01), Tada et al.
patent: 2006/0071271 (2006-04-01), Omura et al.
patent: 2006/0124994 (2006-06-01), Jang et al.
patent: 2006/0220117 (2006-10-01), Yang et al.
patent: 2007/0128788 (2007-06-01), Lee et al.
patent: 2008/0251838 (2008-10-01), Ono et al.
patent: 2000-349292 (2000-12-01), None

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