Methods and apparatus for cleaning semiconductor substrates afte

Cleaning and liquid contact with solids – Processes – For metallic – siliceous – or calcareous basework – including...

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438690, 438691, 134 2, 510175, 510176, H01L 21302, C23G 102, C11D 904

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active

061623016

ABSTRACT:
A cleaning solution, method, and apparatus for cleaning semiconductor substrates after chemical mechanical polishing of copper films is described. The present invention includes a cleaning solution which combines deionized water, an organic compound, and a fluoride compound in an acidic pH environment for cleaning the surface of a semiconductor substrate after polishing a copper layer. Such methods of cleaning semiconductor substrates after copper CMP alleviate the problems associated with brush loading and surface and subsurface contamination.

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