Cleaning and liquid contact with solids – Processes – For metallic – siliceous – or calcareous basework – including...
Patent
1999-01-07
2000-12-19
Gupta, Yogendra
Cleaning and liquid contact with solids
Processes
For metallic, siliceous, or calcareous basework, including...
438690, 438691, 134 2, 510175, 510176, H01L 21302, C23G 102, C11D 904
Patent
active
061623016
ABSTRACT:
A cleaning solution, method, and apparatus for cleaning semiconductor substrates after chemical mechanical polishing of copper films is described. The present invention includes a cleaning solution which combines deionized water, an organic compound, and a fluoride compound in an acidic pH environment for cleaning the surface of a semiconductor substrate after polishing a copper layer. Such methods of cleaning semiconductor substrates after copper CMP alleviate the problems associated with brush loading and surface and subsurface contamination.
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Hymes Diane J.
Krusell Wilbur C.
Zhang Liming
Zhao Yuexing
Gupta Yogendra
Lam Research Corporation
Webb Gregory E.
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