Stacked non-volatile memory device and methods for...

Details Stacked non-volatile memory device and methods for... Stacked non-volatile memory device and methods for...

2011-07-12

2011-07-12

Pham, Thanh V (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S314000, C257SE29126, C257SE29309, C257SE29316, C438S261000, C438S287000

Reexamination Certificate

active

07977735

ABSTRACT:
A stacked non-volatile memory device comprises a plurality of bit line and word line layers stacked on top of each other. The bit line layers comprise a plurality of bit lines that can be formed using advanced processing techniques making fabrication of the device efficient and cost effective. The device can be configured for NAND operation.

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