Static information storage and retrieval – Read/write circuit – Including magnetic element
Reexamination Certificate
2011-05-10
2011-05-10
Lappas, Jason (Department: 2827)
Static information storage and retrieval
Read/write circuit
Including magnetic element
C365S055000, C365S062000, C365S173000, C365S213000
Reexamination Certificate
active
07940592
ABSTRACT:
Method and apparatus for using a uni-directional write current to store different logic states in a non-volatile memory cell, such as a modified STRAM cell. In some embodiments, the memory cell has an unpinned ferromagnetic reference layer adjacent a cladded conductor, a ferromagnetic storage layer and a tunneling barrier between the reference layer and the storage layer. Passage of a current along the cladded conductor induces a selected magnetic orientation in the reference layer, which is transferred through the tunneling barrier for storage by the storage layer. Further, the orientation of the applying step is provided by a cladding layer adjacent a conductor along which a current is passed and the current induces a magnetic field in the cladding layer of the selected magnetic orientation.
REFERENCES:
patent: 5695864 (1997-12-01), Slonczewski
patent: 5841193 (1998-11-01), Eichelberger
patent: 6169686 (2001-01-01), Brug et al.
patent: 6256223 (2001-07-01), Sun
patent: 7009877 (2006-03-01), Huai et al.
patent: 7379327 (2008-05-01), Chen et al.
patent: 7394684 (2008-07-01), Inokuchi et al.
patent: 2002/0186582 (2002-12-01), Sharma et al.
patent: 2006/0284640 (2006-12-01), Wang et al.
patent: 2008/0099885 (2008-05-01), You et al.
patent: 2008/0149379 (2008-06-01), Nagase et al.
patent: 2008/0205125 (2008-08-01), Kajiyama et al.
patent: 2008/0258247 (2008-10-01), Mancoff et al.
patent: 1248265 (2002-10-01), None
patent: 1296331 (2003-03-01), None
patent: 1321943 (2003-06-01), None
Anderson Paul E.
Dimitrov Dimitar V.
Lu Yon
Reed Daniel Seymour
Xue Song S.
Fellers , Snider, et al.
Lappas Jason
Seagate Technology LLC
LandOfFree
Spin-torque bit cell with unpinned reference layer and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Spin-torque bit cell with unpinned reference layer and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Spin-torque bit cell with unpinned reference layer and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2677545