Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2011-03-22
2011-03-22
Landau, Matthew C (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S487000, C438S763000, C438S799000, C257SE21347
Reexamination Certificate
active
07910415
ABSTRACT:
A method of manufacturing a semiconductor device including a substrate; an insulating film formed thereon; a first semiconductor layer where strain is induced in the directions parallel to the surface of the substrate, the first semiconductor layer being on the insulating film; a source region and a drain region formed in the first semiconductor layer; and a gate layered body formed of a gate insulating film and a gate electrode on the first semiconductor layer is disclosed. The method includes the steps of (a) forming a second semiconductor layer by epitaxial growth on the first semiconductor layer; (b) heating the second semiconductor layer; and (c) removing the second semiconductor layer. The second semiconductor layer is different in lattice constant in an in-plane direction from the first semiconductor layer. Step (b) induces the strain in the first semiconductor layer by exposing the surface of the second semiconductor layer to energy lines.
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Fujitsu Patent Center
Fujitsu Semiconductor Limited
Landau Matthew C
Staniszewski Aaron
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