SOI semiconductor device with body contact and method thereof

Details SOI semiconductor device with body contact and method thereof SOI semiconductor device with body contact and method thereof

2011-04-19

2011-04-19

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S525000, C257SE21345

Reexamination Certificate

active

07927934

ABSTRACT:
A method including providing a substrate and providing an insulating layer overlying the substrate is provided. The method further includes providing a body region comprising a body material overlying the insulating layer. The method further includes forming at least one transistor overlying the insulating layer, the at least one transistor having a source, a drain and a gate with a sidewall spacer, the sidewall spacer comprising a substantially uniform geometric shape around the gate, the gate overlying the body region. The method further includes forming a first silicide region within the source and a second silicide region within the drain, the first silicide region having a differing geometric shape than the second silicide region and being electrically conductive between the body region and the source.

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