Transparent conductor based pinned photodiode

Details Transparent conductor based pinned photodiode Transparent conductor based pinned photodiode

2011-03-01

2011-03-01

Gurley, Lynne A (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S290000, C257S291000, C257S293000, C257S458000, C257S461000, C257S462000, C257S463000, C257S464000, C257SE21540, C257SE27140

Reexamination Certificate

active

07898010

ABSTRACT:
A pinned photodiode with improved short wavelength light response. In exemplary embodiments of the invention, a gate oxide is formed over a doped, buried region in a semiconductor substrate. A conductor is formed on top of the gate oxide. The gate conductor is transparent, and in one embodiment is a layer of indium-tin oxide. The transparent conductor can be biased to reduce the need for a surface dopant in creating a pinned photodiode region. The biasing of the transparent conductor produces a hole-rich accumulation region near the surface of the substrate. The gate conductor material permits a greater amount of charges from short wavelength light to be captured in the photo-sensing region in the substrate, and thereby increases the quantum efficiency of the photosensor.

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D.L. Losee, et al., “All-ITO Gate, Two-Phase CCD Image Sensor Technology,” IEDM p. 03-397.

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