Method and system for improving critical dimension proximity...

Details Method and system for improving critical dimension proximity... Method and system for improving critical dimension proximity...

2011-04-12

2011-04-12

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

With measuring or testing

C438S033000, C257SE21507, C257SE21304

Reexamination Certificate

active

07923265

ABSTRACT:
A method for improving critical dimension uniformity of a substrate is provided. An equation based on a proximity trend of a pattern on a first substrate is determined. The equation is applied in a regression model to determine a parameter value of a second substrate. A recipe of an exposure equipment is adjusted based on the parameter value for exposure of the second substrate. Also, a system for controlling critical dimension of a pattern on a substrate is provided. The system includes an advance process control system for collecting exposure data of the substrate, and a regression model within the advance process control system for analyzing the exposure data and determining a parameter value of a recipe of the exposure tool. The regression model is operable to determine an equation based on a proximity trend of the substrate.

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