Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-08-16
2011-08-16
Del Sole, Joseph S (Department: 1743)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S064000, C257S255000, C257S288000, C257S351000, C257S369000, C117S043000, C117S063000
Reexamination Certificate
active
07999319
ABSTRACT:
The present invention discloses the use of edge-angle-optimized solid phase epitaxy for forming hybrid orientation substrates comprising changed-orientation Si device regions free of the trench-edge defects typically seen when trench-isolated regions of Si are recrystallized to the orientation of an underlying single-crystal Si template after an amorphization step. For the case of amorphized Si regions recrystallizing to (100) surface orientation, the trench-edge-defect-free recrystallization of edge-angle-optimized solid phase epitaxy may be achieved in rectilinear Si device regions whose edges align with the (100) crystal's in-plane <100> directions.
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Saenger Katherine L.
Sung Chun-yung
Yin Haizhou
Del Sole Joseph S
International Business Machines - Corporation
Malekzadeh Seyed Masoud
Percello, Esq. Louis J.
Scully , Scott, Murphy & Presser, P.C.
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