Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – In integrated circuit
Reexamination Certificate
2011-06-21
2011-06-21
Landau, Matthew C (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
With means to increase breakdown voltage threshold
In integrated circuit
C257S331000, C257S401000, C257S409000, C257SE29014
Reexamination Certificate
active
07964931
ABSTRACT:
A semiconductor device1includes a square substrate2, first RESURF structures3in the shape of planar stripes on an element area10of a main surface of the substrate2, a transistor T arranged between the first RESURF structures3, a first high withstand voltage section11constituted by second RESURF structures3ain the shape of planar strips on a periphery of the main surface of the substrate2, and a second high withstand voltage section12constituted by third RESURF structures3bwhich are symmetrically arranged at corners of the substrate2with respect to a diagonal line D of the main surface of the substrate2.
REFERENCES:
patent: 6919610 (2005-07-01), Saitoh et al.
patent: 7595542 (2009-09-01), Park et al.
patent: 2001/0028083 (2001-10-01), Onishi et al.
patent: 2006/0043478 (2006-03-01), Yamaguchi et al.
patent: 2003-86800 (2003-03-01), None
Landau Matthew C
Nicely Joseph C
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Sanken Electric Co. Ltd.
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