Method of forming a semiconductor device featuring a gate...

Details Method of forming a semiconductor device featuring a gate... Method of forming a semiconductor device featuring a gate...

2011-06-14

2011-06-14

Garber, Charles (Department: 2812)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Total dielectric isolation

C438S585000, C438S588000, C438S591000

Reexamination Certificate

active

07960243

ABSTRACT:
A semiconductor device (10) is formed in a semiconductor layer (12). A gate stack (16,18) is formed over the semiconductor layer and comprises a first conductive layer (22) and a second layer (24) over the first layer. The first layer is more conductive and provides more stopping power to an implant than the second layer. A species (46) is implanted into the second layer. Source/drain regions (52) are formed in the semiconductor layer on opposing sides of the gate stack. The gate stack is heated after the step of implanting to cause the gate stack to exert stress in the semiconductor layer in a region under the gate stack.

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