Shielded gate trench FET with an inter-electrode dielectric...

Details Shielded gate trench FET with an inter-electrode dielectric... Shielded gate trench FET with an inter-electrode dielectric...

2011-05-03

2011-05-03

Ngo, Ngan (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S332000, C257S333000, C257SE29200, C257SE29201

Reexamination Certificate

active

07936009

ABSTRACT:
A shielded gate trench field effect transistor (FET) comprises trenches extending into a semiconductor region. A shield electrode is disposed in a bottom portion of each trench. The shield electrode is insulated from the semiconductor region by a shield dielectric. A gate electrode is disposed in each trench over the shield electrode, and an inter-electrode dielectric (IED) comprising a low-k dielectric extends between the shield electrode and the gate electrode.

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