Shielded gate trench FET with an inter-electrode dielectric...

Details Shielded gate trench FET with an inter-electrode dielectric... Shielded gate trench FET with an inter-electrode dielectric...

2011-01-18

2011-01-18

Pham, Hoai v (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S331000, C257SE27091

Reexamination Certificate

active

07872305

ABSTRACT:
A shielded gate field effect transistor (FET) comprises a plurality of trenches extending into a semiconductor region. A shield electrode is disposed in a bottom portion of each trench, and a gate electrode is disposed over the shield electrode in each trench. An inter-electrode dielectric (IED) extends between the shield electrode and the gate electrode. The IED comprises a first oxide layer and a nitride layer over the first oxide layer.

REFERENCES:
patent: 6351018 (2002-02-01), Sapp
patent: 6861296 (2005-03-01), Hurst et al.
patent: 7005353 (2006-02-01), Kocon et al.
patent: 7091573 (2006-08-01), Hirler et al.
patent: 2004/0031987 (2004-02-01), Henninger et al.
patent: 2006/0170062 (2006-08-01), Kim et al.
patent: 2006/0267090 (2006-11-01), Sapp et al.
patent: 2006/0273386 (2006-12-01), Yilmaz et al.

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