Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2011-06-21
2011-06-21
Phan, Trong (Department: 2827)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S171000, C365S173000
Reexamination Certificate
active
07965543
ABSTRACT:
A method for reducing spin-torque current density needed to switch a magnetoelectronic device (200, 300, 400), includes applying (602) a voltage bias having a predetermined polarity to the magnetoelectronic device (200, 300, 400) that creates a spin-polarized current with spin torque transfer to a synthetic antiferromagnet free layer (206), applying (604) a magnetic field having a predetermined direction to the magnetoelectronic device (200, 300, 400), removing (606) the applied magnetic field; and removing (608) the voltage bias subsequent to removing (606) the applied magnetic field, wherein the polarity of the voltage bias and the direction of the magnetic field leave the synthetic antiferromagnet free layer (206) in a predetermined magnetic state after the voltage bias is removed.
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Rizzo Nicholas D.
Slaughter Jon M.
Everspin Technologies, Inc.
Ingrassia Fisher & Lorenz P.C.
Phan Trong
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