Surface-activation of semiconductor nanostructures for...

Semiconductor device manufacturing: process – Radiation or energy treatment modifying properties of... – Ionized irradiation

Reexamination Certificate

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C257SE21218, C257SE21311, C257SE21334, C438S712000, C438S788000, C438S960000, C977S774000, C977S786000, C977S888000

Reexamination Certificate

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08003551

ABSTRACT:
The present invention provides means and methods for producing surface-activated semiconductor nanoparticles suitable for in vitro and in vivo applications that can fluoresce in response to light excitation. Semiconductor nanostructures can be produced by generating a porous layer in semiconductor substrate comprising a network of nanostructures. Prior or subsequent to cleavage from the substrate, the nanostructures can be activated by an activation means such as exposing their surfaces to a plasma, oxidation or ion implantation. In some embodiments, the surface activation renders the nanostructures more hydrophilic, thereby facilitating functionalization of the nanoparticles for either in vitro or in vivo use.

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