Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – On insulating substrate or layer
Reexamination Certificate
2011-04-05
2011-04-05
Landau, Matthew C (Department: 2813)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
On insulating substrate or layer
C257SE21090
Reexamination Certificate
active
07919397
ABSTRACT:
The present invention provides a method for reducing the agglomeration of a Si layer in an SOI substrate, which can prevent the agglomeration of the Si layer from occurring in a heating and temperature-raising process for the Si layer, when heating and temperature-raising the Si layer that is the outermost surface of the SOI substrate and is in an exposed state, and can prevent the agglomeration further without forming a protective film on the SOI substrate. The method for reducing the agglomeration of the Si layer in the SOI substrate is a method of supplying a hydride gas in a heating and temperature-raising process for the Si layer, when heating and temperature-raising the Si layer which is in an exposed state in the SOI substrate that has an insulation layer and the Si layer sequentially stacked on a Si substrate. In this method, the hydride gas dissociates before the Si layer coheres, at a temperature at which the Si layer does not yet start agglomeration, and terminates a dangling bond of the Si layer with a predetermined atom such as H.
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Jahan, C. et al., “Agglomeration Control During the Selective Epitaxial Growth of Si Raised Sources and Drains on Ultra-thin Silicon-on-Insulator Substrates”, Journal of Crystal Growth, vol. 280, No. 3-4, pp. 530-538 (2005).
Date Hiroki
Nakatsuru Junko
Canon Anelva Corporation
Fitzpatrick ,Cella, Harper & Scinto
Landau Matthew C
McCall Shepard Sonya D
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