Semiconductor device and method of manufacturing...

Details Semiconductor device and method of manufacturing... Semiconductor device and method of manufacturing...

2011-01-18

2011-01-18

Mandala, Victor A (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S288000, C257S394000, C257S406000, C257S652000, C257SE29161, C257SE29162, C257SE29165

Reexamination Certificate

active

07872316

ABSTRACT:
Disclosed herein is a semiconductor device including a gate insulating film formed over a semiconductor substrate, and a gate electrode formed over the gate insulating film, wherein the gate insulating film is so provided as to protrude from both sides of the gate electrode, and the gate electrode includes a wholly silicided layer.

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Motofumi Saitoh et al.; Strain Controlled CMOSFET with Phase Controlled Full-silicide (PC-FUSI)/HfSiON Gate Stack Structure for 45nm-NODE LSTP Devices; 2006 Symposium on VLSI Technology Digest of Technical Papers.
Office Action issued by the Japanese Patent Office on May 26, 2009 in connection to related Japanese Patent Application No. 2007-131452.

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