Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

2011-06-07

2011-06-07

Sarkar, Asok K (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S268000, C438S283000, C257SE21629

Reexamination Certificate

active

07955913

ABSTRACT:
A method for manufacturing a semiconductor device includes determining an active region in a semiconductor substrate, forming a recess in a gate region crossing over the active region, annealing an oxide layer formed in the recess to oxidize the active region in the gate region, and etching the active region by using the oxidized active region as an etch mask.

REFERENCES:
patent: 2002/0094622 (2002-07-01), Sneelal et al.
patent: 2007/0012997 (2007-01-01), Chung et al.
patent: 10-2005-0106306 (2005-11-01), None
patent: 10-2006-0130322 (2006-12-01), None
patent: 10-0675290 (2007-01-01), None
Machine Translation of KR-10-0675290; Ahn et all, Jan. 29, 2007.
Notice of Rejection for Korean Patent Application No. 10-2007-0109149, dated Apr. 19, 2008.

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