Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2011-08-09

2011-08-09

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S331000, C257S334000, C257S329000, C257SE21193, C257SE21429

Reexamination Certificate

active

07994570

ABSTRACT:
A semiconductor device in which current flows in a vertical direction includes a structure that decreases resistance between a source electrode and a drain electrode along with a current path at a position different from a position having highest electric field intensity between the source electrode and the drain electrode.

REFERENCES:
patent: 2008/0099837 (2008-05-01), Akiyama et al.
patent: 11-177086 (1999-07-01), None

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