Non-volatile memory cell

Details Non-volatile memory cell Non-volatile memory cell

2011-03-08

2011-03-08

Jackson, Jr., Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S314000, C257SE21422

Reexamination Certificate

active

07902587

ABSTRACT:
A non-volatile memory cell is described, including a semiconductor substrate, two separate charge trapping structures on the substrate, first spacers at least on the opposite sidewalls of the two charge trapping structures, a gate dielectric layer on the substrate between the two charge trapping structures, a gate on the two charge trapping structures and the gate dielectric layer, and two doped regions in the substrate beside the gate.

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