Nitrogen doped silicon wafer and manufacturing method thereof

Details Nitrogen doped silicon wafer and manufacturing method thereof Nitrogen doped silicon wafer and manufacturing method thereof

2011-01-25

2011-01-25

Kunemund, Robert M (Department: 1714)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

C117S015000, C117S201000, C117S214000, C117S932000

Reexamination Certificate

active

07875117

ABSTRACT:
An epitaxial wafer and a high-temperature heat treatment wafer having an excellent gettering capability are obtained by performing epitaxial growth or a high-temperature heat treatment. A relational equation relating the density to the radius of an oxygen precipitate introduced in a silicon crystal doped with nitrogen at the time of crystal growth can be derived from the nitrogen concentration and the cooling rate around 1100° C. during crystal growth, and the oxygen precipitate density to be obtained after a heat treatment can be predicted from the derived relational equation relating the oxygen precipitate density to the radius, the oxygen concentration, and the wafer heat treatment process. Also, an epitaxially grown wafer and a high-temperature annealed wafer whose oxygen precipitate density has been controlled to an appropriate density are obtained, using conditions predicted by the method.

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