Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive
Reexamination Certificate
2011-07-19
2011-07-19
Toledo, Fernando L (Department: 2895)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Physical stress responsive
C438S048000, C438S050000, C438S051000, C257S049000, C257SE21001
Reexamination Certificate
active
07981715
ABSTRACT:
The invention relates to a method for producing a MEMS/NEMS structure from a substrate made in a monocrystalline semiconductor material, the structure comprising a flexible mechanical element connected to the substrate by at least one anchoring zone, the method comprising the following steps:the formation of a protection layer on one face of the substrate, the protection layer being made in a monocrystalline material different from the material of the substrate,etching of the protection layer and the substrate in order to produce at least one cavity, the etching being done so as to leave an overhang made in the material of the protection layer on the edges of the cavity,filling in of the cavity with an electrically insulating material in order to obtain an insulating anchoring portion,epitaxy of a semiconductor material from the protection layer and the electrically insulating material in order to obtain a layer designed to produce the flexible mechanical element,liberation of the flexible mechanical element while allowing at least a portion of said overhang to remain.
REFERENCES:
patent: 4948757 (1990-08-01), Jain et al.
patent: 7057251 (2006-06-01), Reid
patent: 2005/0032266 (2005-02-01), Suzuki
patent: 2005/0231794 (2005-10-01), Funaki
patent: 2008/0108165 (2008-05-01), Lutz et al.
patent: 2009/0002804 (2009-01-01), Natarajan et al.
Commissariat a l''Energie Atomique
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Toledo Fernando L
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