Semiconductor device and method for manufacturing

Details Semiconductor device and method for manufacturing Semiconductor device and method for manufacturing

2011-03-08

2011-03-08

Malsawma, Lex (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29309, C257SE21409, C438S261000

Reexamination Certificate

active

07902592

ABSTRACT:
A semiconductor device and a method for manufacturing the semiconductor device is disclosed. The semiconductor device includes a bit line formed to extend into a semiconductor substrate, a charge storage layer formed on the semiconductor substrate, a word line formed above the charge storage layer to extend across the bit line, a gate electrode formed on the charge storage layer under the word line and between bit lines, a first insulating film formed over the bit line and to extend in the direction of the bit line and a second insulating film that includes a different material than that of the first insulating film and formed to adjoin a side surface of the first insulating film. In addition, the semiconductor device includes an interlayer insulating film that includes a different material from that of the second insulating film that is formed on the first insulating film and the second insulating film and a contact plug coupled to the bit line and formed to penetrate through the first insulating film and the interlayer insulating film and to be sandwiched by the second insulating film.

REFERENCES:
patent: 7352037 (2008-04-01), Kim et al.
patent: 2007/0126051 (2007-06-01), Kanegae
patent: 2008/0128776 (2008-06-01), Kim
patent: 2008/0290396 (2008-11-01), Matsunaga et al.

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