Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-08-02
2011-08-02
Richards, N Drew (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S328000, C257S329000
Reexamination Certificate
active
07989881
ABSTRACT:
A vertically oriented self terminating semiconductor device such as a discrete trench MOS device (10, 38) that includes a cylindrical drift region (18) that extend downward from a surface region to a substrate (11) and a dielectric region (20) that exponentially tapers outward from the cylindrical drift region as the drift region approaches the substrate. A field plate electrode (12) is disposed on the dielectric region. Alternatively, the gate electrode (40, 46) may be disposed on the dielectric region, optionally with an underlying field plate electrode (48).
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Letavic Theodore
Petruzzello John
NXP B.V.
Richards N Drew
Withers Grant S
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