Semiconductor device suitable for a ferroelectric memory

Details Semiconductor device suitable for a ferroelectric memory Semiconductor device suitable for a ferroelectric memory

2011-04-19

2011-04-19

Smith, Bradley K (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE21664

Reexamination Certificate

active

07928489

ABSTRACT:
There is formed a gate electrode (word line) via a gate insulating film on a semiconductor substrate, the gate electrode extending in the direction inclining at an angle of approximately 45 degrees to the extending direction of an element region. The element region is divided into three portions by the two gate electrodes. In each element region portion, two MOS transistors are provided. A bit line is connected to a W plug provided in the central region portion and lower electrodes of two ferroelectric capacitors are connected to other W plugs provided in both end region portions. The extending direction of the bit line inclines approximately 45 degrees to the extending direction of the element region.

REFERENCES:
patent: 6656801 (2003-12-01), Corvasce et al.
patent: 6713808 (2004-03-01), Wang et al.
patent: 2005/0012125 (2005-01-01), Summerfelt et al.
patent: 2000349250 (2000-12-01), None
patent: 2003-92391 (2003-03-01), None
Machine Translation of JP2000-349250 (cited by applicant).
Merriam-Webster Online, www.m-w.com.
Japanese Office Action dated May 25, 2010, issued in corresponding Japanese Patent Application No. 2003-364917 (with partial translation).

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