Semiconductor light emitting device and method of...

Details Semiconductor light emitting device and method of... Semiconductor light emitting device and method of...

2011-08-02

2011-08-02

Parker, Ken A (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257S014000, C257S094000, C257SE33001

Reexamination Certificate

active

07989820

ABSTRACT:
Provided are a semiconductor light emitting device and a method of fabricating the same. The semiconductor light emitting device comprises: a light emitting structure comprising a first conductive type semiconductor layer, an active layer under the first conductive type semiconductor layer, and a second conductive type semiconductor layer under the active layer; a reflective electrode layer under the light emitting structure, and an outer protection layer at an outer circumference of the reflective electrode layer.

REFERENCES:
patent: 6744071 (2004-06-01), Sano et al.
patent: 7659553 (2010-02-01), Kato et al.
patent: 2005/0101064 (2005-05-01), Yamazaki et al.
patent: 2005/0121688 (2005-06-01), Nagai et al.
patent: 11-4042 (1999-01-01), None
patent: 2000-114666 (2000-04-01), None

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