Storage node of stack capacitor and fabrication method thereof

Details Storage node of stack capacitor and fabrication method thereof Storage node of stack capacitor and fabrication method thereof

2011-05-31

2011-05-31

Ngo, Ngan (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S306000, C257S308000, C257SE27025

Reexamination Certificate

active

07952127

ABSTRACT:
A storage node structure includes a substrate having thereon a conductive block region; an etching stop layer covering the conductive block region; a conductive layer penetrating the etching stop layer and electrically connecting the conductive block region; an annular shaped conductive spacer on sidewall of the conductive layer, wherein the annular shaped conductive spacer is disposed on the etching stop layer and wherein the annular shaped conductive spacer and the conductive layer constitute a storage node pedestal; and an upper node portion stacked on the storage node pedestal.

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