Magnetoresistive element

Details Magnetoresistive element Magnetoresistive element

2011-08-30

2011-08-30

Luu, Pho M (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S145000, C365S171000, C365S173000, C365S097000, C257S295000, C257S296000, C257S421000, C257S422000

Reexamination Certificate

active

08009465

ABSTRACT:
A magnetoresistive element includes a first ferromagnetic layer having a first magnetization, the first magnetization having a first pattern when the magnetoresistive element is half-selected during a first data write, a second pattern when the magnetoresistive element is selected during a second data write, and a third pattern of residual magnetization, the first pattern being different from the second and third pattern, a second ferromagnetic layer having a second magnetization, and a nonmagnetic layer arranged between the first ferromagnetic layer and the second ferromagnetic layer and having a tunnel conductance changing dependent on a relative angle between the first magnetization and the second magnetization.

REFERENCES:
patent: 5748524 (1998-05-01), Chen et al.
patent: 5757695 (1998-05-01), Shi et al.
patent: 5953248 (1999-09-01), Chen et al.
patent: 6205053 (2001-03-01), Anthony
patent: 6365948 (2002-04-01), Kumagai et al.
patent: 6563682 (2003-05-01), Sugawara et al.
patent: 6605836 (2003-08-01), Kishi et al.
patent: 6765824 (2004-07-01), Kishi et al.
patent: 6949779 (2005-09-01), Kai et al.
patent: 7095071 (2006-08-01), Fukuzumi et al.
patent: 7140096 (2006-11-01), Kishi et al.
patent: 7326982 (2008-02-01), Iwata et al.
patent: 7411263 (2008-08-01), Nakayama et al.
patent: 7414880 (2008-08-01), Kai et al.
patent: 2002/0130339 (2002-09-01), Kishi et al.
patent: 2003/0185050 (2003-10-01), Kishi et al.
patent: 2004/0062938 (2004-04-01), Kai et al.
patent: 2004/0246777 (2004-12-01), Maejima et al.
patent: 2004/0256688 (2004-12-01), Braun
patent: 2005/0078417 (2005-04-01), Kishi et al.
patent: 2005/0199926 (2005-09-01), Fukuzumi et al.
patent: 2005/0242384 (2005-11-01), Iwata et al.
patent: 2006/0082933 (2006-04-01), Kishi et al.
patent: 2007/0012972 (2007-01-01), Nakayama et al.
patent: 2007/0013015 (2007-01-01), Kai et al.
patent: 11-273337 (1999-10-01), None
patent: 2002-231904 (2002-08-01), None
patent: 2002-280637 (2002-09-01), None
patent: 2003-78112 (2003-03-01), None
patent: 2003-283001 (2003-10-01), None
patent: 2004-128015 (2004-04-01), None
patent: 2004-128067 (2004-04-01), None
patent: 2004-146614 (2004-05-01), None
patent: 2004-179183 (2004-06-01), None
patent: 2005-353788 (2005-12-01), None
patent: WO 03/107350 (2003-12-01), None

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