Flash memory device and method for fabricating the same

Details Flash memory device and method for fabricating the same Flash memory device and method for fabricating the same

2011-01-25

2011-01-25

Dang, Trung (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29001, C438S594000

Reexamination Certificate

active

07875924

ABSTRACT:
An embedded flash memory device and a method for fabricating the same which reduces the size of a memory device using logic CMOS fabricating processes and enhancing a coupling ratio of the memory device. The flash memory device includes a coupling oxide layer on an active area of a semiconductor substrate, a first control gate formed on and/or over the coupling oxide layer and a second control gate formed on and/or over and enclosing lateral sidewalls of the coupling oxide layer and the first control gate.

REFERENCES:
patent: 6303708 (2001-10-01), Brown
patent: 7485533 (2009-02-01), Lee
patent: 2003/0160280 (2003-08-01), Yoshino
patent: 2005/0236662 (2005-10-01), Lee
patent: 2007/0231986 (2007-10-01), Shin
patent: 2009/0101961 (2009-04-01), He et al.
patent: 2010/0221881 (2010-09-01), Ozawa

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