Methods for forming a plurality of contact holes in a...

Details Methods for forming a plurality of contact holes in a... Methods for forming a plurality of contact holes in a...

2011-08-23

2011-08-23

Smoot, Stephen W (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S675000, C257SE21023

Reexamination Certificate

active

08003523

ABSTRACT:
A method including: forming a dielectric layer over a substrate of a microelectronic device; forming a photoresist layer over the dielectric layer; performing a first exposure of the photoresist layer to permit portions of the dielectric layer to be removed at a first plurality of locations; subsequent to performing the first exposure, performing a second exposure of the photoresist layer to permit portions of the dielectric layer to be removed at a second plurality of locations different from the first plurality of locations; removing the portions of the dielectric layer at each of i) the first plurality of locations and ii) the second plurality of locations; and etching the dielectric layer at each of i) the first plurality of locations and ii) the second plurality of locations to respectively form a contact hole at each of the i) the first plurality of locations and ii) the second plurality of locations.

REFERENCES:
patent: 6251745 (2001-06-01), Yu
patent: 7001712 (2006-02-01), Imai et al.
patent: 7704875 (2010-04-01), Wu et al.
patent: 2004/0110095 (2004-06-01), Imai et al.

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