Flash memory device and a method of fabricating the same

Details Flash memory device and a method of fabricating the same Flash memory device and a method of fabricating the same

2011-01-11

2011-01-11

Sarkar, Asok K (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S321000, C257SE29129, C257SE29300

Reexamination Certificate

active

07868373

ABSTRACT:
The invention relates to a flash memory device and its method of fabrication. The method includes the steps of: forming gate protection patterns over a peripheral region of a semiconductor substrate; forming a tunnel insulating film over the semiconductor substrate; forming a first conductive film over the tunnel insulating film between adjacent gate protection patterns; forming a dielectric film over the first conductive film and the gate protection patterns; etching a portion of the dielectric film in the peripheral region to expose a portion of the first conductive film between adjacent gate protection patterns; forming a second conductive film over the dielectric film and the first conductive film; and etching the second conductive film, the dielectric film, the first conductive film, the tunnel insulating film and the gate protection patterns to form a gate, wherein the gate protection patterns remain on the sidewalls of the first conductive film and the tunnel insulating film in the peripheral region.

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Translation of Office Action for corresponding Chinese Application No. 200710145274.X, dated Jul. 18, 2008.

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